IBM Lenovo Memory

MRDIMM Memory

Multiplexed Rank DIMM (MRDIMM) memory technology allows two ranks of data to be feed simultaneously, allowing 128 bytes of memory data to be fed to the CPU, twice as much as with regular DDR5 DIMMs. This increases DRAM speed from the 4,800 MT/s of common current DDR5 implementations to up to 8,800 MT/s. For more information, see the Lenovo Press article, Introduction to MRDIMM Memory Technology.

CXL Memory

CXL Memory connects to the processor via PCIe lanes rather than traditional memory connections. CXL Memory DIMMs are in a different memory form factor to regular DIMMs, instead installing in E3.S 2T drive bays. CXL Memory has increased memory bandwidth compared to RDIMMs which can be a performance benefit to applications. For more information, see the Lenovo Press article, Introduction To CXL 2.0 Memory.

Performance+ Memory

Memory intensive workloads needing a competitive advantage will benefit from Lenovo’s Performance+ memory. Lenovo engineers worked in partnership with leading memory suppliers to develop and tune ThinkSystem servers enabling them to exceed the latest industry standard for memory performance.

In ThinkSystem servers with the latest Intel Xeon processors, Lenovo’s Performance+ memory delivers increased memory speed with two memory channels populated.

3DS RDIMMs

To meet the ever increasing demand for higher density server memory modules, Lenovo offers 3DS (3 Dimensional Stacked) DDR4 RDIMMs which apply TSV (Through Silicon Via) technology from our partnership with a leading Tier 1 DRAM supplier. The new TSV 3DS stack technology enables higher density DRAM stack packages with higher operational frequency and reduced power consumption. The RDIMM configuration along with 3DS TSV DRAM packages exhibits performance benefits and lower power consumption over alternative high density solutions to ultimately provide the lowest TCO for data centers.

Figure 2. Intel Optane Persistent Memory